The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Sep. 20, 2022
Ce Cell Engineering Gmbh, Kabelsketal, DE;
Hongming Zhao, Halle/Saale, DE;
CE CELL ENGINEERING GMBH, Kabelsketal, DE;
Abstract
The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance. This object is achieved by first providing the silicon solar cell with the emitter layer, the contact grid and a rear contact, and electrically connecting the contact grid to one pole of a voltage source, then a contacting device that is electrically connected to the other pole of the voltage source is connected to the rear contact, and with the voltage source, a voltage is applied directed contrary to the forward direction of the silicon solar cell that is less than the breakdown voltage of the silicon solar cell and, when applying this voltage, a point light source is guided over the sun-facing side of the silicon solar cell and thereby a section of a subsection of the sun-facing side is illuminated and thus a current flow is induced in the subsection where the current flow relative to the section has a current density of 200 A/cmto 20,000 A/cmand acts on the subsection for 10 ns to 10 ms.