The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 01, 2021
Ce Cell Engineering Gmbh, Kabelsketal, DE;
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung Eingetragener Verein, Munich, DE;
Hongming Zhao, Halle/Saale, DE;
Stefan Stöckel, Radebeul, DE;
Eckehard Hofmüller, Rieda, DE;
Eve Krassowski, Großbadest, DE;
Marko Turek, Halle, DE;
Christian Hagendorf, Halle, DE;
Stephan Grosser, Halle, DE;
CE CELL ENGINEERING GMBH, Kabelsketal, DE;
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG EINGETRAGENER VEREIN, Munich, DE;
Abstract
The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which, in a treatment step, a treatment current flow having a current density of 200 A/cmto 20,000 A/cmin relation to the treatment section is induced while biasing and illuminating the silicon solar cell. The object of the invention is to improve the method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. In particular, it should be possible to quantify the improvement achieved by the method while implementing the method. Furthermore, any damage resulting from the application of unfavourable process parameters should be detected while the method is being implemented. This object is achieved in that a measurement step is carried out before and/or after the treatment step, and, in said measurement step, a measurement current flow having a current density of 1 mA/cmto 500 mA/cmis induced by illuminating the sun-facing side of the silicon solar cells and biasing, and a current strength of said measurement current flow is sensed using an ammeter and stored assigned to the respective measurement section.