For the Inventor, By the Inventor

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Fremont, CA, United States of America

Axt, Inc.

USPTO Granted Patents = 20

EPO Patents = 2

Trademarks = 3

Forward Citations = 137

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25 inventors (with patents filed for the assignee):

Weiguo Liu (12 out of 14 patents)

Morris Young (8 out of 9 patents)

Rajaram Shetty (4 out of 6 patents)

4. Bingwen Liang (4 out of 4 patents)

5. John Chen (4 out of 4 patents)

6. Robert Shih (4 out of 4 patents)

7. Wei Zhang (4 out of 121 patents)

8. Sungnee George Chu (3 out of 3 patents)

9. Wen Wan Zhou (3 out of 3 patents)

10. Heng Liu (2 out of 40 patents)

11. M Hani Badawi (2 out of 2 patents)

12. Xiao Li (1 out of 1 patent)

13. Tan Kaixie (1 out of 1 patent)

14. Gu Yan (1 out of 1 patent)

15. Wang Yuanli (1 out of 1 patent)

20 patents: Sort by Forward Citations

1. 12735808 - Low etch pit density, low slip line density, and low strain indium phosphide (2026-09-15),

2. 12398486 - Method and system for vertical gradient freeze 8 inch gallium arsenide substrates (2025-08-26),

3. 12276044 - Low etch pit density gallium arsenide crystals with boron dopant (2025-04-14),

4. 12084790 - Low etch pit density 6 inch semi-insulating gallium arsenide wafers (2024-09-10),

5. 12054851 - Low etch pit density, low slip line density, and low strain indium phosphide (2024-08-06),

6. 11680340 - Low etch pit density 6 inch semi-insulating gallium arsenide wafers (2023-06-20),

7. 11608569 - Low etch pit density, low slip line density, and low strain indium phosphide (2023-03-21),

8. 8647433 - Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same (2014-02-11),

9. 8506706 - Systems, methods and substrates of monocrystalline germanium crystal growth (2013-08-13),

10. 8361225 - Low etch pit density (EPD) semi-insulating III-V wafers (2013-01-29),

11. 8318042 - Systems, methods and solutions for chemical polishing of GaAs wafers (2012-11-27),

12. 8231727 - Crystal growth apparatus and method (2012-07-31),

13. 7566641 - Low etch pit density (EPD) semi-insulating GaAs wafers (2009-07-28),

14. 6896729 - Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control (2005-05-24),

15. 6650018 - High power, high luminous flux light emitting diode and method of making same (2003-11-18),

AXT, Inc. is a leading global provider of high-quality compound and single element semiconductor substrates. With over 30 years of experience, AXT supplies a broad range of advanced substrates to the semiconductor industry, including silicon wafers, gallium arsenide (GaAs) wafers, indium phosphide (InP) wafers, and more. These substrates are crucial components in the production of various electronic devices such as lasers, solar cells, and wireless communication devices. AXT's commitment to innovation, manufacturing excellence, and customer satisfaction has made them a trusted partner for many semiconductor manufacturers worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

20 Patents

#104 in Fremont, CA

#3,927 in California

#16,358 in US

#31,158 in the World

Fremont, CA, United States of America

Axt, Inc.

Forward Citations = 137

25 inventors:

Weiguo Liu (12 out of 14 patents)

Morris Young (8 out of 9 patents)

Rajaram Shetty (4 out of 6 patents)

4. Bingwen Liang (4 out of 4 patents)

5. John Chen (4 out of 4 patents)

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