For the Inventor, By the Inventor

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Fremont, CA, United States of America

Axt, Inc.

USPTO Granted Patents = 20

EPO Patents = 2

Trademarks = 3

Forward Citations = 137

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25 inventors (with patents filed for the assignee):

Weiguo Liu (12 out of 14 patents)

Morris Young (8 out of 9 patents)

Rajaram Shetty (4 out of 6 patents)

4. Bingwen Liang (4 out of 4 patents)

5. John Chen (4 out of 4 patents)

6. Robert Shih (4 out of 4 patents)

7. Wei Zhang (4 out of 122 patents)

8. Sungnee George Chu (3 out of 3 patents)

9. Wen Wan Zhou (3 out of 3 patents)

10. Heng Liu (2 out of 40 patents)

11. M Hani Badawi (2 out of 2 patents)

12. Xiao Li (1 out of 1 patent)

13. Tan Kaixie (1 out of 1 patent)

14. Gu Yan (1 out of 1 patent)

15. Wang Yuanli (1 out of 1 patent)

20 patents: Sort by Forward Citations

1. 12735808 - Low etch pit density, low slip line density, and low strain indium phosphide (2026-09-15),

2. 12398486 - Method and system for vertical gradient freeze 8 inch gallium arsenide substrates (2025-08-26),

3. 12276044 - Low etch pit density gallium arsenide crystals with boron dopant (2025-04-14),

4. 12084790 - Low etch pit density 6 inch semi-insulating gallium arsenide wafers (2024-09-10),

5. 12054851 - Low etch pit density, low slip line density, and low strain indium phosphide (2024-08-06),

6. 11680340 - Low etch pit density 6 inch semi-insulating gallium arsenide wafers (2023-06-20),

7. 11608569 - Low etch pit density, low slip line density, and low strain indium phosphide (2023-03-21),

8. 8647433 - Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same (2014-02-11),

9. 8506706 - Systems, methods and substrates of monocrystalline germanium crystal growth (2013-08-13),

10. 8361225 - Low etch pit density (EPD) semi-insulating III-V wafers (2013-01-29),

11. 8318042 - Systems, methods and solutions for chemical polishing of GaAs wafers (2012-11-27),

12. 8231727 - Crystal growth apparatus and method (2012-07-31),

13. 7566641 - Low etch pit density (EPD) semi-insulating GaAs wafers (2009-07-28),

14. 6896729 - Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control (2005-05-24),

15. 6650018 - High power, high luminous flux light emitting diode and method of making same (2003-11-18),

Company Overview

Axt, Inc. is a technology company based in Fremont, California, specializing in the development and manufacturing of advanced semiconductor materials. The company focuses on producing high-quality substrates and components that are essential for various applications in the electronics and optoelectronics sectors. Axt's expertise extends to areas such as compound semiconductors, which are critical for devices used in telecommunications, consumer electronics, and renewable energy technologies. Their commitment to innovation positions them as a key player in the semiconductor industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

20 Patents

#104 in Fremont, CA

#3,933 in California

#16,382 in US

#31,233 in the World

Fremont, CA, United States of America

Axt, Inc.

Forward Citations = 137

25 inventors:

Weiguo Liu (12 out of 14 patents)

Morris Young (8 out of 9 patents)

Rajaram Shetty (4 out of 6 patents)

4. Bingwen Liang (4 out of 4 patents)

5. John Chen (4 out of 4 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Axt, Inc.. Retrieved from https://idiyas.com/company/axt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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