The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jun. 20, 2023
Axt, Inc., Fremont, CA (US);
Rajaram Shetty, Niskayuna, NY (US);
Weiguo Liu, San Leandro, CA (US);
Morris Young, Fremont, CA (US);
AXT, Inc., Fremont, CA (US);
Abstract
Methods and systems for low etch pit density 6 inch semi-insulating gallium arsenide wafers may include a semi-insulating gallium arsenide single crystal wafer having a diameter of 6 inches or greater without intentional dopants for reducing dislocation density, an etch pit density of less than 1000 cm, and a resistivity of 1×10Ω-cm or more. The wafer may have an optical absorption of less than 5 cmless than 4 cmor less than 3 cmat 940 nm wavelength. The wafer may have a carrier mobility of 3000 cm/V-sec or higher. The wafer may have a thickness of 500 μm or greater. Electronic devices may be formed on a first surface of the wafer. The wafer may have a carrier concentration of 1.1×10cmor less.