The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Dec. 11, 2019
Axt, Inc., Fremont, CA (US);
Rajaram Shetty, Niskayuna, NY (US);
Weiguo Liu, San Leandro, CA (US);
Morris Young, Fremont, CA (US);
AXT, Inc., Fremont, CA (US);
Abstract
Methods and systems for low etch pit density gallium arsenide crystals with boron dopant may include a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density of less than 500 cm, and optical absorption of 6 cmor less at 940 nm. The wafer may have an etch pit density of less than 200 cm. The wafer may have a diameter of 6 inches or greater. The wafer may have a boron concentration between 1×10cmand 2×10cm. The wafer may have a thickness of 300 μm or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.