The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2019

Filed:

May. 20, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Nan-Jung Chen, Toufen Town, TW;

Jui-Chung Peng, Hsin-Chu, TW;

Kevin Hung, Er-Lin Town, TW;

An-Kuo Yang, Hsin Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2005.12); G03F 7/20 (2005.12); G01J 1/42 (2005.12);
U.S. Cl.
CPC ...
G03F 7/70133 (2012.12); G01J 1/4257 (2012.12); G03F 7/70125 (2012.12);
Abstract

Methods for determining a quality of a light source applied to a photolithographic process are provided. An image sensor array is exposed to a light from a light source. Addresses and respective intensities corresponding to a plurality of locations on a pupil map representing intensity of the light from on the image sensor array. At least one of an inner curve and an outer curve of the pupil map is defined based upon the collected addresses and respective intensities. The light source is applied to a photolithographic process if the addresses have a predetermined pattern relative to the at least one of the inner curve and the outer curve.


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