The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jun. 27, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yen-Cheng Lu, New Taipei, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An extreme ultraviolet lithography (EUVL) system is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states having respective reflection coefficient is r, rand r, wherein ris a pre-specified value that is a function of rand r. The system also includes a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light. The system further includes a projection optics box (PUB) to remove a portion of the non-diffracted light and to collect and direct the diffracted light and the remaining non-diffracted light to expose a target.