The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Mar. 27, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chi-Cheng Hung, Tainan, TW;
Yu-Sheng Wang, Tainan, TW;
Ting-Siang Su, Tainan, TW;
Ching-Hwanq Su, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/28 (2006.01); C23C 14/02 (2006.01); C23C 14/18 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2855 (2013.01); C23C 14/025 (2013.01); C23C 14/185 (2013.01); H01L 21/28123 (2013.01); H01L 29/42376 (2013.01); H01L 21/76843 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/78 (2013.01);
Abstract
The present disclosure provides a semiconductor structure, including an active region with a first surface; an isolated region having a second surface, surrounding the active region, the first surface being higher than the second surface; and a metal gate having a plurality of metal layers disposed over the first surface and the second surface. A ratio of a thinnest portion and a thickest portion of at least one of the plurality of metal layers is greater than about 40%.