The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Jul. 30, 2010
Applicants:

Zhaohui Cheng, Tokyo, JP;

Hikaru Koyama, Kodaira, JP;

Yoshinobu Kimura, Tokyo, JP;

Hiroyuki Shinada, Mitaka, JP;

Osamu Komuro, Hitachinaka, JP;

Inventors:

Zhaohui Cheng, Tokyo, JP;

Hikaru Koyama, Kodaira, JP;

Yoshinobu Kimura, Tokyo, JP;

Hiroyuki Shinada, Mitaka, JP;

Osamu Komuro, Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); H01J 2237/2803 (2013.01);
Abstract

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.


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