The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Aug. 16, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Lai Wei Chih, Hsin-Chu, TW;

Monsen Liu, Zhudong Township, TW;

En-Hsiang Yeh, Hsin-Chu, TW;

Chuei-Tang Wang, Hsin-Chu, TW;

Chen-Hua Yu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/38 (2006.01); H01Q 1/22 (2006.01); H01L 23/00 (2006.01); H01L 23/66 (2006.01); H01L 21/48 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01Q 1/36 (2006.01); H01Q 9/04 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01Q 1/2283 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01); H01L 23/66 (2013.01); H01L 24/02 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01Q 1/36 (2013.01); H01Q 9/0407 (2013.01); H01L 21/568 (2013.01); H01L 23/3121 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

An antenna apparatus comprises a semiconductor die embedded in and adjacent to a first side of a molding compound layer, a plurality of first interconnects formed on the first side of the molding compound layer, wherein the plurality of first interconnects are electrically connected the semiconductor die and an antenna structure formed on a second side of the molding compound layer, wherein the antenna structure is electrically connected to the semiconductor die through a via connected between the plurality of first interconnects and the antenna structure.


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