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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9976111 B1

PDFFull Text
Date of Patent:
May. 22, 2018

Filed:

Apr. 26, 2016

Tin hard mask and etch residual removal

Applicant:

Air Products and Chemicals, Inc., Allentown, PA (US);

Inventors:

Wen Dar Liu, Chupei, TW;

Yi-Chia Lee, Chupei, TW;

William Jack Casteel, Jr., Fountain Hill, PA (US);

Tianniu Chen, Westford, MA (US);

Rajiv Krishan Agarwal, Malvern, PA (US);

Madhukar Bhaskara Rao, Carlsbad, CA (US);

Assignee:

VERSUM MATERIALS US, LLC, Tempe, AZ (US);

Attorney:

Lina Yang

Primary Examiner:

Gregory Webb

Int. Cl.
CPC ...
C11D 7/26 (2006.01); C11D 11/00 (2006.01); C11D 3/39 (2006.01); C11D 3/43 (2006.01); C11D 3/30 (2006.01); C11D 3/20 (2006.01); C11D 3/33 (2006.01); C11D 3/28 (2006.01); C11D 3/00 (2006.01); C11D 3/37 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); C11D 3/0073 (2013.01); C11D 3/2086 (2013.01); C11D 3/28 (2013.01); C11D 3/30 (2013.01); C11D 3/33 (2013.01); C11D 3/3773 (2013.01); C11D 3/3947 (2013.01); C11D 3/43 (2013.01); H01L 21/02068 (2013.01); H01L 21/0332 (2013.01); H01L 21/31111 (2013.01); H01L 21/76865 (2013.01);
Abstract

Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

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