The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Sep. 09, 2016
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Makoto Suyama, Tokyo, JP;

Naohiro Yamamoto, Tokyo, JP;

Masato Ishimaru, Tokyo, JP;

Hidenori Toyooka, Tokyo, JP;

Norihiro Hosaka, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 43/12 (2006.01); B08B 9/08 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); B08B 9/08 (2013.01); H01J 37/321 (2013.01); H01J 37/3211 (2013.01); H01J 37/32165 (2013.01); H01J 37/32651 (2013.01); H01J 37/32853 (2013.01); H01J 37/32862 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); B08B 7/0035 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract

According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.


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