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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9954069 B1

PDFFull Text
Date of Patent:
Apr. 24, 2018

Filed:

Mar. 30, 2016

Semiconductor device and method of forming vertical structure

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Chih-Tang Peng, Hsinchu County, TW;

Tai-Chun Huang, Hsinchu, TW;

Teng-Chun Tsai, Hsinchu, TW;

Cheng-Tung Lin, Hsinchu County, TW;

De-Fang Chen, Hsinchu, TW;

Li-Ting Wang, Hsinchu, TW;

Chien-Hsun Wang, Hsinchu, TW;

Huan-Just Lin, Hsinchu, TW;

Yung-Cheng Lu, Hsinchu, TW;

Tze-Liang Lee, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/564 (2013.01); H01L 27/088 (2013.01); H01L 29/0676 (2013.01); H01L 29/42356 (2013.01); H01L 29/66272 (2013.01); H01L 29/66439 (2013.01); H01L 29/66666 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/7889 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a source/drain region, a barrier layer, and an interlayer dielectric. The barrier layer surrounds the source/drain region. The interlayer dielectric surrounds the barrier layer. As such, the source/drain region can be protected by the barrier layer from oxidation during manufacturing of the semiconductor device, e.g., the formation of the interlayer dielectric.

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