The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Aug. 31, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Tsung-Lin Yang, Hsin-Chu, TW;
Hua Feng Chen, Hsinchu, TW;
Kuei-Shun Chen, Hsinchu, TW;
Min-Yann Hsieh, Hsin-Chu, TW;
Po-Hsueh Li, Taichung, TW;
Shih-Chi Fu, Hsinchu County, TW;
Yuan-Hsiang Lung, Hsinchu, TW;
Yan-Tso Tsai, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method of patterning a substrate includes forming a hard mask layer over the substrate; forming a first material layer over the hard mask layer; and forming a trench in the first material layer. The method further includes treating the hard mask layer with an ion beam through the trench. An etching rate of a treated portion of the hard mask layer reduces with respect to an etching process while an etching rate of untreated portions of the hard mask layer remains substantially unchanged with respect to the etching process. After the treating of the hard mask layer, the method further includes removing the first material layer and removing the untreated portions of the hard mask layer with the etching process, thereby forming a hard mask over the substrate. The method further includes etching the substrate with the hard mask as an etch mask.