The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Jun. 27, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Jorge A. Munoz, Hillsboro, OR (US);

Dmitri E. Nikonov, Beaverton, OR (US);

Kelin J. Kuhn, Aloha, OR (US);

Patrick Theofanis, Pasadena, CA (US);

Chytra Pawashe, Beaverton, OR (US);

Kevin Lin, Beaverton, OR (US);

Seiyon Kim, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B82B 1/00 (2006.01); B82B 3/00 (2006.01); H01L 29/66 (2006.01); H01L 29/84 (2006.01); H01L 29/82 (2006.01); H01H 59/00 (2006.01); B82Y 15/00 (2011.01); B82Y 25/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B82B 1/005 (2013.01); B82B 1/002 (2013.01); B82B 3/0023 (2013.01); H01H 59/0009 (2013.01); H01L 29/66227 (2013.01); H01L 29/82 (2013.01); H01L 29/84 (2013.01); B82Y 15/00 (2013.01); B82Y 25/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/732 (2013.01); Y10S 977/838 (2013.01); Y10S 977/888 (2013.01); Y10S 977/938 (2013.01);
Abstract

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.


Find Patent Forward Citations

Loading…