The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Jun. 28, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Hsien Chou, Tainan, TW;
Hung-Ling Shih, Tainan, TW;
Tsun-Kai Tsao, Tainan, TW;
Ming-Huei Shen, Dounan Town, Yunlin County, TW;
Kuo-Hwa Tzeng, Taipei, TW;
Yeur-Luen Tu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a bottom portion and a top portion. The bottom portion has a lining oxide layer, a negatively-charged liner and a first silicon oxide. The lining oxide layer is peripherally enclosed by the semiconductor substrate, the negatively-charged liner is peripherally enclosed by the lining oxide layer, and the first silicon oxide is peripherally enclosed by the negatively-charged liner. The top portion adjoins the bottom portion, and has a second silicon oxide peripherally enclosed by and contacting the semiconductor substrate.