The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Apr. 01, 2015
Lam Research Corporation, Fremont, CA (US);
Helen H. Zhu, Fremont, CA (US);
Linda Marquez, San Jose, CA (US);
Faisal Yaqoob, Fremont, CA (US);
Pilyeon Park, Santa Clara, CA (US);
Ivan L. Berry, III, San Jose, CA (US);
Ivelin A. Angelov, Sunnyvale, CA (US);
Joon Hong Park, Dublin, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods of selectively etching silicon nitride on a semiconductor substrate by providing silicon to the plasma to achieve high etch selectivity of silicon nitride to silicon-containing materials are provided. Methods involve providing silicon from a solid or fluidic silicon source or both. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. A silicon gas source may be flowed to the plasma during etch.