The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jan. 23, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ruqiang Bao, Wappingers Falls, NY (US);
Siddarth A. Krishnan, Newark, CA (US);
Unoh Kwon, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/3213 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 27/11 (2006.01); H01L 29/43 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/28088 (2013.01); H01L 21/32139 (2013.01); H01L 21/8234 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/435 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract
Multiple gate stack portions are formed in a gate cavity by direct metal gate patterning to provide FinFETs having different threshold voltages. The different threshold voltages are obtained by selectively incorporating metal layers with different work functions in different gate stack portions.
Bao, Ruqiang. (2018). Alternative threshold voltage scheme via direct metal gate patterning for high performance cmos finfets (U.S. Patent No. 9905476). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9905476
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile