The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jul. 31, 2014
Applicant:
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Inventors:
Satoshi Terakura, Tokyo, JP;
Masahito Mori, Tokyo, JP;
Takao Arase, Tokyo, JP;
Ryuta Machida, Tokyo, JP;
Assignee:
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); B44C 1/22 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/311 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NFgas and a CHF gas.