Tokyo, Japan

Ryuta Machida


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Ryuta Machida

Introduction

Ryuta Machida is a notable inventor based in Tokyo, Japan, recognized for his contributions to the field of plasma etching technologies. With a focus on developing advanced methods for semiconductor fabrication, his work has garnered attention in the innovation sector.

Latest Patents

Machida holds one patent, which details a novel dry etching method. This inventive technique involves the plasma etching of a second laminated film, which comprises a silicon-containing film and a silicon dioxide film. The method includes etching both the inorganic film and the second laminated film using a mixed gas composed of NF gas and CHF gas, showcasing Machida's expertise in enhancing etching processes and improving material performance.

Career Highlights

Machida is currently employed at Hitachi High-Technologies Corporation, where he plays a pivotal role in advancing semiconductor technology. His contributions have been instrumental in developing reliable and efficient etching methods, which are crucial for manufacturing high-performance electronic devices.

Collaborations

Throughout his career, Ryuta Machida has collaborated with other notable experts in the field, including coworkers Satoshi Terakura and Masahito Mori. These collaborations have furthered his inventive work and contributed to innovations in plasma etching methods.

Conclusion

Ryuta Machida's dedication to innovation within the semiconductor industry, particularly through his development of an efficient dry etching method, places him among the leading inventors in his field. As technology continues to evolve, his contributions will undoubtedly have a lasting impact on the industry.

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