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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9870995 B1

PDFFull Text
Date of Patent:
Jan. 16, 2018

Filed:

Jun. 18, 2015

Formation of copper layer structure with self anneal strain improvement

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jun-Nan Nian, Tainan, TW;

Shiu-Ko Jangjian, Tainan, TW;

Chi-Cheng Hung, Tainan, TW;

Yu-Sheng Wang, Tainan, TW;

Hung-Hsu Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Seth Dumbris

Int. Cl.
CPC ...
H01L 23/532 (2006.01); B32B 15/01 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); B32B 15/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); B32B 15/01 (2013.01); H01L 21/2885 (2013.01); H01L 21/76877 (2013.01);
Abstract

A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.

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Nian, Jun-Nan. (2018). Formation of copper layer structure with self anneal strain improvement (U.S. Patent No. 9870995). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9870995

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