The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jun. 27, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chia-Ching Huang, Yilan County, TW;

Tsung-Yu Chen, Hsinchu, TW;

Chia-Hao Hsu, Hsinchu, TW;

Shinn-Sheng Yu, Hsinchu, TW;

Chia-Chen Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/54 (2006.01); G03F 7/20 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01);
Abstract

The present disclosure provides an extreme ultraviolet (EUV) lithography system. The EUV lithography system includes a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module. The gas pipeline includes inward and outward entrances into the collector. The inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector.


Find Patent Forward Citations

Loading…