Method for manufacturing laterally insulated-gate bipolar transistor

Abstract

The present invention relates to a method for manufacturing a laterally insulated-gate bipolar transistor, comprising: providing a wafer having an N-type buried layer (), an STI (), and a first N well ()/a first P well () which are formed successively from above a substrate; depositing and forming a high-temperature oxide film on the first N well () of the wafer; performing thermal drive-in on the wafer and performing photoetching and etching on the high-temperature oxide film to form a mini oxide layer (); performing photoetching and ion implantation so as to form a second N well () inside the first N well () and second P wells () inside the first N well () and the first P well (); then successively forming a gate oxide layer and a polysilicon gate (), wherein one end of the gate oxide layer and the polysilicon gate () extends onto the second P well () inside the first N well (), and the other end extends onto the mini oxide layer () on the second N well (); and photoetching and injecting N-type ions between the mini oxide layer () and the STI () adjacent to the mini oxide layer () to form a drain electrode, and at the same time forming a source electrode () inside the second P well ().