Fengying Chen

Title: The Innovative Contributions of Fengying Chen

Introduction

Fengying Chen is a prominent inventor based in Jiangsu, China. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of advanced transistors. Her work has been recognized for its innovative approach and technical depth.

Latest Patents

Fengying Chen holds a patent for a "Method for manufacturing laterally insulated-gate bipolar transistor." This invention involves a detailed process that includes providing a wafer with an N-type buried layer, an STI, and a first N well/a first P well formed successively from above a substrate. The method further includes depositing a high-temperature oxide film, performing thermal drive-in, and conducting photoetching and etching to create a mini oxide layer. Additionally, it involves photoetching and ion implantation to form a second N well and second P wells, followed by the formation of a gate oxide layer and a polysilicon gate. The process culminates in the injection of N-type ions to create a drain electrode and a source electrode within the transistor structure.

Career Highlights

Fengying Chen is currently employed at CSMC Technologies Fab2 Co., Ltd., where she continues to push the boundaries of semiconductor manufacturing. Her expertise and innovative mindset have positioned her as a key player in her field.

Collaborations

Fengying Chen has collaborated with notable colleagues, including Feng Huang and Guangtao Han. These partnerships have fostered a collaborative environment that enhances the development of cutting-edge technologies.

Conclusion

Fengying Chen's contributions to the field of semiconductor technology exemplify her innovative spirit and dedication to advancing manufacturing processes. Her patent for the method of manufacturing laterally insulated-gate bipolar transistors showcases her technical expertise and commitment to innovation.