Liangliang Ping

Title: Inventor Liangliang Ping: Innovating Transistor Manufacturing Techniques

Introduction

Liangliang Ping is a prominent inventor based in Jiangsu, China, recognized for his innovative contributions to the field of semiconductor technology. With a unique approach to manufacturing laterally insulated-gate bipolar transistors, he has made significant strides that enhance the performance of electronic devices.

Latest Patents

Liangliang Ping holds a patent for a method for manufacturing a laterally insulated-gate bipolar transistor. This patent outlines a comprehensive process that includes the provision of a wafer with various components, such as an N-type buried layer and shallow trench isolation (STI). The innovative method further involves depositing a high-temperature oxide film, performing thermal drive-in, and applying photoetching and etching techniques to create specific layers that are essential for the operational efficiency of the transistor.

Career Highlights

Ping's career is marked by his association with CSMC Technologies Fab2 Co., Ltd., where he has employed his skills in semiconductor manufacturing. His dedication to advancing transistor technology through innovative methodologies has positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Liangliang Ping has collaborated with fellow engineers and inventors, including Feng Huang and Guangtao Han. These partnerships have fostered a collaborative spirit that enhances the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Liangliang Ping's contributions to the manufacturing process of laterally insulated-gate bipolar transistors exemplify his commitment to innovation in semiconductor technology. As he continues to develop groundbreaking methods, the impact of his work on the industry remains profound, paving the way for advancements in electronic devices worldwide.