Lixiang Liu

Title: Lixiang Liu: Innovator in Semiconductor Technology

Introduction

Lixiang Liu is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of advanced transistors. His innovative approach has led to the development of a unique method that enhances the performance and efficiency of electronic devices.

Latest Patents

Lixiang Liu holds a patent for a "Method for manufacturing laterally insulated-gate bipolar transistor." This invention involves a detailed process that includes providing a wafer with an N-type buried layer, an STI, and a first N well/a first P well. The method further includes depositing a high-temperature oxide film, performing thermal drive-in, and etching to create a mini oxide layer. Liu's process also incorporates photoetching and ion implantation to form additional wells and electrodes, ultimately leading to the creation of a highly efficient transistor.

Career Highlights

Lixiang Liu is currently employed at CSMC Technologies Fab2 Co., Ltd. His work at this leading semiconductor manufacturing company has allowed him to apply his innovative ideas in a practical setting. Liu's expertise in semiconductor fabrication has positioned him as a key player in the industry.

Collaborations

Lixiang Liu has collaborated with notable colleagues, including Feng Huang and Guangtao Han. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Lixiang Liu's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances the performance of electronic devices but also showcases the importance of collaboration in driving technological progress.