The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Mar. 09, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jian-Hua Chen, Hsinchu, TW;
Tai-I Yang, Hsinchu, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chia-Tien Wu, Taichung, TW;
Tien-Lu Lin, Hsinchu, TW;
Tien-I Bao, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate. The method also includes forming an opening in the dielectric layer. A dielectric constant of a first portion of the dielectric layer is less than that of a second portion of the dielectric layer surrounding the opening. The method further includes forming a conductive feature in the opening. The second portion is between the first portion and the conductive feature. In addition, the method includes modifying an upper portion of the first portion to increase the dielectric constant of the upper portion of the first portion. The method also includes removing the upper portion of the first portion and the second portion.