The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Jul. 20, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Li-Wei Feng, Kaohsiung, TW;

Tong-Jyun Huang, Tainan, TW;

Shih-Hung Tsai, Tainan, TW;

Jyh-Shyang Jenq, Pingtung County, TW;

Chun-Yao Yang, Kaohsiung, TW;

Ming-Shiou Hsieh, Chiayi County, TW;

Rong-Sin Lin, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0638 (2013.01); H01L 29/0653 (2013.01); H01L 29/66537 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. First, a substrate having a fin-shaped structure thereon is provided, a spacer is formed adjacent to the fin-shaped structure, and the spacer is used as mask to remove part of the substrate for forming an isolation trench, in which the isolation trench includes two sidewall portions and a bottom portion. Next, a plasma doping process is conducted to implant dopants into the two sidewall portions and the bottom portion of the isolation trench.


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