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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9831177 B1

PDFFull Text
Date of Patent:
Nov. 28, 2017

Filed:

Aug. 17, 2015

Through via structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yung-Chi Lin, Su-Lin, TW;

Hsin-Yu Chen, Taipei, TW;

Lin-Chih Huang, Hsin-Chu, TW;

Tsang-Jiuh Wu, Hsin-Chu, TW;

Wen-Chih Chiou, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Angel Roman

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01); H01L 24/13 (2013.01); H01L 27/088 (2013.01); H01L 23/525 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 23/53271 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01);
Abstract

An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.

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