The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Dec. 13, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yen-Cheng Lu, New Taipei, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Jeng-Horng Chen, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An extreme ultraviolet lithography (EUVL) system for patterning a semiconductor wafer includes an extreme ultraviolet (EUV) mask. The EUV mask includes first and second states, and further includes a polygon region and an open-spacing region. The polygon region includes a plurality of main polygons separated by a plurality of first fields. The open-spacing region is located outside the polygon region, and includes a plurality of sub-resolution polygon and second fields, and does not include any main polygons. The system also includes a nearly on-axis illumination (ONI) to expose the EUV mask and optics to direct diffracted lights reflected from the EUV mask towards the semiconductor wafer.