The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jul. 17, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Soo Won Lee, Gyoung Ki-Do, KR;

Kyu Won Lee, Kyunggi-Do, KR;

Eun Jin Jeong, Chungbuk, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 21/4846 (2013.01); H01L 23/498 (2013.01); H01L 23/49838 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 24/16 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81385 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.


Find Patent Forward Citations

Loading…