The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Nov. 17, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Arthur Hotzel, Dresden, DE;

Philipp Jaschinsky, Dresden, DE;

Remi Riviere, Dresden, DE;

Wolfram Grundke, Dresden, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/50 (2012.01); G03F 1/70 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70325 (2013.01); G03F 1/50 (2013.01); G03F 1/70 (2013.01);
Abstract

Methods, apparatus, and system for minimizing defectivity in top-coat-free immersion photolithography are provided. Embodiments include forming a photomask by defining a first pattern including a main functional pattern in the photomask; and defining a second pattern including a sub-resolution fill pattern in the photomask in areas between or and/or within structures of the first pattern, the fill pattern having a pitch or range of pitches smaller than a minimum resolved pitch of the lithographic exposure and/or at least a part of the sub-resolution structures of the sub-resolution fill pattern not substantially modifying an imaging of any structure of the main functional pattern in the lithographic exposure.


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