The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Dec. 30, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yu-Chih Liu, Taipei, TW;

Hai-Ming Chen, Kaohsiung, TW;

Wei-Ting Lin, Taipei, TW;

Jing Ruei Lu, Taipei, TW;

Tsung-Ding Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 25/10 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 23/42 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/56 (2013.01); H01L 23/3128 (2013.01); H01L 23/3675 (2013.01); H01L 23/3737 (2013.01); H01L 23/42 (2013.01); H01L 23/49827 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/73253 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01);
Abstract

A method includes bonding a first device die onto a top surface of a package substrate, and performing an expose molding on the first device die and the package substrate. At least a lower portion of the first device die is molded in a molding material. A top surface of the molding material is level with or higher than a top surface of the first device die. After the expose molding, a second device die is bonded onto a top surface of the first device die. The second device die is electrically coupled to the first device die through through-silicon vias in a semiconductor substrate of the first device die.


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