The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Apr. 05, 2016
Tokyo Electron Limited, Tokyo, JP;
Yu Nagatomo, Miyagi, JP;
Ryuuu Ishita, Miyagi, JP;
Daisuke Tamura, Miyagi, JP;
Kousuke Koiwa, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.