The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Sep. 14, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Kazuya Kato, Miyagi, JP;
Toshihiko Shindo, Miyagi, JP;
Ryuichi Asako, Yamanashi, JP;
Hiroshi Nagahata, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/02118 (2013.01); H01L 21/31116 (2013.01); H01L 21/76826 (2013.01); H01L 21/76834 (2013.01); H01L 23/5329 (2013.01);
Abstract
A plasma processing method can suppress both surface roughness of a wiring and surface roughness of a metal mask. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas to etch a diffusion barrier film until a copper wiring is exposed and generating plasma of a second processing gas containing a carbon-containing gas to form an organic film on a surface of a target object in which the diffusion barrier film is etched.