The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Sep. 21, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yu-Ling Liou, Taoyuan, TW;
Chih-Tang Peng, Zhubei, TW;
Pei-Ren Jeng, Hsin-Chu, TW;
Hao-Ming Lien, Hsin-Chu, TW;
Tze-Liang Lee, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/02164 (2013.01); H01L 21/02304 (2013.01); H01L 21/02315 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/31155 (2013.01);
Abstract
A method includes performing a plasma treatment on a first surface of a first material and a second surface of a second material simultaneously, wherein the first material is different from the second material. A third material is formed on treated first surface of the first material and on treated second surface of the second material. The first, the second, and the third materials may include a hard mask, a semiconductor material, and an oxide, respectively.