The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Sep. 09, 2014
Applicant:
American Air Liquide, Inc., Fremont, CA (US);
Inventors:
Rahul Gupta, Newark, DE (US);
Venkateswara R. Pallem, Hockessin, DE (US);
Vijay Surla, Newark, DE (US);
Curtis Anderson, Victori, MN (US);
Nathan Stafford, Damascus, OR (US);
Assignee:
American Air Liquide, Inc., Fremont, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C07C 323/03 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); C07C 323/03 (2013.01); H01L 21/02046 (2013.01); H01L 21/30621 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01);
Abstract
Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.