The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Aug. 05, 2016
Applied Materials, Inc., Santa Clara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Jessica S. Kachian, Sunnyvale, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Mei Chang, Sunnyvale, CA (US);
Mary Edmonds, San Diego, CA (US);
Andrew C. Kummel, San Diego, CA (US);
Sang Wook Park, La Jolla, CA (US);
Hyunwoong Kim, La Jolla, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Embodiments described herein provide a self-limiting and saturating Si—Obilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO, but instead produce a saturated Si—Ofilm with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.