The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
May. 05, 2016
Renesas Electronics Corporation, Tokyo, JP;
Kiyoshi Maeshima, Ibaraki, JP;
Kotaro Horikoshi, Ibaraki, JP;
Katsuhiko Hotta, Ibaraki, JP;
Toshiyuki Takahashi, Ibaraki, JP;
Hironori Ochi, Ibaraki, JP;
Kenichi Shoji, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 μg/mand less.