The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jan. 28, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Kai Hsu, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Yu-Hsiang Hung, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Ying-Tsung Chen, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Jyh-Shyang Jenq, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device includes following steps. Firstly, a substrate having a transistor is provided, where the transistor includes a source/drain region. A dielectric layer is formed on the substrate, and a contact plug is formed in the dielectric layer to electrically connect the source/drain region. Next, a mask layer is formed on the dielectric layer, where the mask layer includes a first layer and a second layer stacked thereon. After this a slot-cut pattern is formed on the second layer of the mask layer, and a contact slot pattern is formed on the first layer of the mask layer. Finally, the second layer is removed and a contact opening is formed by using the contact slot pattern on the first layer.