The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Sep. 21, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Kai-Jiun Chang, Taoyuan, TW;
Yi-Wei Chen, Taichung, TW;
Tsun-Min Cheng, Changhua County, TW;
Chih-Chieh Tsai, Kaohsiung, TW;
Wei-Hsin Liu, Changhua County, TW;
Jui-Min Lee, Taichung, TW;
Chia-Lung Chang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Abstract
A dynamic random access memory (DRAM) device includes a substrate, plural word lines and plural bit lines. The word lines are disposed in the substrate along a first trench extending along a first direction. Each of the word lines includes a multi-composition barrier layer, wherein the multi-composition barrier layer includes TiSiNwith x and y being greater than 0 and the multi-composition barrier layer is silicon-rich at a bottom portion thereof and is nitrogen-rich at a top portion thereof. The bit lines are disposed over the word lines and extended along a second direction across the first direction.