The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Aug. 26, 2015
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Dow Global Technologies Llc, Midland, MI (US);
Rohm and Haas Electronic Materials Korea Ltd., Cheonan, KR;
Chang-Young Hong, Cheongwon-gun, KR;
Cheng-Bai Xu, Southborough, MA (US);
Jung Woo Kim, Kyunggido, KR;
Cong Liu, Shrewsbury, MA (US);
Shintaro Yamada, Shrewsbury, MA (US);
Lori Anne Joesten, Charlton, MA (US);
Choong-Bong Lee, Westborough, MA (US);
Phillip D. Hustad, Natick, MA (US);
James C. Taylor, Grafton, MA (US);
Dow Global Technologies LLC, Midland, MI (US);
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Abstract
Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.