The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Feb. 19, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wen-Kuei Liu, Xinpu Township, TW;
Teng-Chun Tsai, Hsinchu, TW;
Kuo-Yin Lin, Jhubei, TW;
Shen-Nan Lee, Jhudong Township, TW;
Yu-Wei Chou, Hsinchu, TW;
Kuo-Cheng Lien, Hsinchu, TW;
Chang-Sheng Lin, Baoshan Township, TW;
Chih-Chang Hung, Hsinchu, TW;
Yung-Cheng Lu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.