The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Feb. 10, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ching-Feng Fu, Taichung, TW;
De-Fang Chen, Hsin-Chu, TW;
Yu-Chan Yen, Taipei, TW;
Chia-Ying Lee, New Taipei, TW;
Chun-Hung Lee, Hsin-Chu, TW;
Huan-Just Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method comprises depositing a sacrificial layer on a first dielectric layer over a substrate, applying a first patterning process, a second patterning process, a third patterning process and a fourth patterning process to the sacrificial layer to form a first group of openings, a second group of openings, a third group of openings and a fourth group of openings, respectively, in the sacrificial layer, wherein openings from different patterning processes are arranged in an alternating manner and four openings of the opening from the different patterning processes form a diamond shape and forming nanowires based on the first group of openings, the second group of openings, the third group of openings and the fourth group of openings.