The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jul. 14, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Che-Cheng Chang, New Taipei, TW;
Chih-Han Lin, Hsinchu, TW;
Jr-Jung Lin, Hsinchu, TW;
Shih-Hao Chen, Hsin-Chu, TW;
Mu-Tsang Lin, Changhua County, TW;
Yung Jung Chang, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method of forming the same are disclosed. The method includes receiving a substrate having an active fin, an oxide layer over the active fin, a dummy gate stack over the oxide layer, and a spacer feature over the oxide layer and on sidewalls of the dummy gate stack. The method further includes removing the dummy gate stack, resulting in a first trench; etching the oxide layer in the first trench, resulting in a cavity underneath the spacer feature; depositing a dielectric material in the first trench and in the cavity; and etching in the first trench so as to expose the active fin, leaving a first portion of the dielectric material in the cavity.