The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Sep. 23, 2015
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Yassine Kabouzi, Fremont, CA (US);

Luc Albarede, Fremont, CA (US);

Andrew D. Bailey, III, Pleasanton, CA (US);

Jorge Luque, Redwood City, CA (US);

Seonkyung Lee, Mountain View, CA (US);

Thorsten Lill, Santa Clara, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3083 (2013.01); H01L 21/31056 (2013.01); H01L 21/31116 (2013.01);
Abstract

A method for dry processing a substrate in a processing chamber is provided. The substrate is placed in the processing chamber. The substrate is dry processed, wherein the dry processing creates at least one gas byproduct. A concentration of the at least one gas byproduct is measured. The concentration of the at least one gas byproduct is used to determine processing rate of the substrate.


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