The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Oct. 26, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yen-Cheng Lu, New Taipei, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/22 (2012.01); G03F 7/20 (2006.01); G03F 1/48 (2012.01); G03F 1/52 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/48 (2013.01); G03F 1/52 (2013.01); G03F 7/2002 (2013.01); G03F 7/2022 (2013.01); G03F 7/70466 (2013.01); G03F 7/70625 (2013.01); G03F 7/70941 (2013.01);
Abstract
An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.