The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Nov. 09, 2012
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Masaki Inoue, Albany, NY (US);
Toshihisa Ozu, Hwaseong, KR;
Takehiro Tanikawa, Miyagi, JP;
Jun Yoshikawa, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01B 13/00 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 29/49 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/31116 (2013.01); H01L 29/4916 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01); H01J 37/32192 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01);
Abstract
An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.