The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Dec. 19, 2011
Applicants:

Charles C. Kuo, Hillsboro, OR (US);

Roksana Golizadeh Mojarad, San Jose, CA (US);

Brian S. Doyle, Portland, OR (US);

David L. Kencke, Beaverton, OR (US);

Kaan Oguz, Dublin, IE;

Robert S. Chau, Beaverton, OR (US);

Inventors:

Charles C. Kuo, Hillsboro, OR (US);

Roksana Golizadeh Mojarad, San Jose, CA (US);

Brian S. Doyle, Portland, OR (US);

David L. Kencke, Beaverton, OR (US);

Kaan Oguz, Dublin, IE;

Robert S. Chau, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 29/82 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); H01L 29/82 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 27/228 (2013.01);
Abstract

Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer.


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