The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Sep. 01, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Su Xing, Singapore, SG;
Hsueh-Wen Wang, Hsinchu, TW;
Chien-Yu Ko, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Jen-Yu Wang, Tainan, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Yu-Ming Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An oxide semiconductor transistor includes an oxide semiconductor channel layer, a metal gate, a gate insulation layer, an internal electrode, and a ferroelectric material layer. The metal gate is disposed on the oxide semiconductor channel layer. The gate insulation layer is disposed between the metal gate and the oxide semiconductor channel layer. The internal electrode is disposed between the gate insulation layer and the metal gate. The ferroelectric material layer is disposed between the internal electrode and the metal gate. The ferroelectric material layer in the oxide semiconductor transistor of the present invention is used to enhance the electrical characteristics of the oxide semiconductor transistor.